Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser

ABSTRACT

A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional under 35 U.S.C. §121 of co-pending andcommonly-assigned U.S. Utility patent application Ser. No. 13/947,755,filed on Jul. 22, 2013, by Casey O. Holder, Daniel F. Feezell, Steven P.DenBaars, James S. Speck, and Shuji Nakamura, and entitled “STRUCTUREAND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITYSURFACE EMITTING LASER,” attorneys docket number 30794.458-US-U1(2013-044-3), which application claims the benefit under 35 U.S.C.Section 119(e) of the following co-pending and commonly-assignedapplications:

U.S. Provisional Patent Application Ser. No. 61/673,966, filed on Jul.20, 2012, by Casey Holder, Daniel F. Feezell, Steven P. DenBaars, andShuji Nakamura, entitled “STRUCTURE AND METHOD FOR THE FABRICATION OF AGALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER” attorneys'docket number 30794.458-US-P1 (2013-044-1);

U.S. Provisional Patent Application Ser. No. 61/679,553, filed on Aug.3, 2012, by Casey Holder, Daniel F. Feezell, James S. Speck, Steven P.DenBaars, and Shuji Nakamura, entitled “DEMONSTRATION OF NONPOLAR GANBASED VERTICAL-CAVITY SURFACE-EMITTING LASERS” attorneys' docket number30794.458-US-P2 (2013-044-2);

U.S. Provisional Patent Application Ser. No. 61/673,985, filed on Jul.20, 2012, by Casey Holder, Daniel F. Feezell, Steven P. DenBaars, andShuji Nakamura, entitled “NON-POLAR AND SEMI-POLAR GALLIUM NITRIDEVERTICAL CAVITY SURFACE EMITTING LASER” attorneys' docket number30794.459-US-P1 (2013-046-1);

U.S. Provisional Patent Application Ser. No. 61/673,994, filed on Jul.20, 2012, by Casey Holder, Daniel F. Feezell, Steven P. DenBaars, andShuji Nakamura, entitled “POLARIZATION-LOCKED ARRAY OF GALLIUM NITRIDEVERTICAL CAVITY SURFACE EMITTING LASERS” attorneys' docket number30794.460-US-P1 (2013-043-1);

U.S. Provisional Patent Application Ser. No. 61/674,035 filed on Jul.20, 2012, by Casey Holder, Daniel F. Feezell, Steven P. DenBaars, andShuji Nakamura, entitled “SINGLE-LONGITUDINAL-MODE (AL,IN,GA)NVERTICAL-CAVITYSURFACE-EMITTING LASER” attorneys' docket number30794.461-US-P1 (2013-048-1);

U.S. Provisional Patent Application Ser. No. 61/674,003, filed on Jul.20, 2012, by Casey Holder, Daniel F. Feezell, Steven P. DenBaars, andShuji Nakamura, entitled “LIGHTING SYSTEM USING NON-POLAR AND SEMI-POLARGALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASERS” attorneys'docket number 30794.462-US-P1 (2013-045-1);

U.S. Provisional Patent Application Ser. No. 61/674,012 filed on Jul.20, 2012, by Casey Holder, Daniel F. Feezell, Steven P. DenBaars, andShuji Nakamura, entitled “DISPLAY SYSTEM USING NON-POLAR AND SEMI-POLARGALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASERS” attorneys'docket number 30794.463-US-P1 (2013-047-1); and

U.S. Provisional Patent Application Ser. No. 61/707,118 filed on Sep.28, 2012, by Robert M. Farrell, Casey O. Holder, Steven P. DenBaars, andShuji Nakamura, entitled “VIOLET III-NITRIDE NONPOLAR OR SEMIPOLARVERTICAL-CAVITY SURFACE-EMITTING LASER FOR SOLID-STATE LIGHTING SYSTEMS”attorneys' docket number 30794.469-US-P1 (2013-134-1);

all of which applications are incorporated by reference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a structure and method for the fabrication ofa III-nitride Vertical Cavity Surface Emitting Laser (VCSEL).

2. Description of the Related Art

(Note: This application references a number of different publications asindicated throughout the specification by one or more reference numberswithin brackets, e.g., [x]. A list of these different publicationsordered according to these reference numbers can be found below in thesection entitled “References.” Each of these publications isincorporated by reference herein.)

One of the main difficulties in producing an (Al,In,Ga)N laser is theformation of Distributed Bragg reflector (DBR) mirrors, particularly thebottom mirror. Two differing approaches to this mirror have been taken:Nichia [1] and Panasonic [2] have used a flip-chip mounting method andthen mechanical substrate removal to reveal a smooth facet for theapplication of a dielectric DBR mirror. This approach has thedisadvantage of having very little control over cavity length. This canbe alleviated, as demonstrated by Panasonic [2], by using very longcavity length, which results in a narrow longitudinal mode spacing suchthat there is always a longitudinal mode in alignment with the emissionof the quantum well. This, however, makes single longitudinal modeoperation impossible.

Another approach is to epitaxially grow a DBR mirror, as demonstrated byT-C Lu et al [3], who used AlN/GaN alternating periods to achieve a highreflectivity mirror. This approach provides precise control of cavitylength, but the fabrication of such an epitaxial mirror is extremelydifficult due to difficulties like relaxation, and costly due to the rawmaterials and time needed for such epitaxial growth.

Dielectric mirrors are much simpler to produce, so an approach thatallows for precise control of cavity length (such as through epitaxialgrowth instead of mechanical polishing) with the simultaneous use ofdielectric DBR mirrors would be ideal for (Al,In,Ga)N VCSEL fabrication.The present invention satisfies this need.

To date, there have been no public demonstrations of nonpolar orsemipolar (Al,In,Ga)N VCSELs. Three groups, including Nichia [1],Panasonic [2], and National Chiao Tung University [3] have demonstratedelectrically-injected c-plane (polar) (Al,In,Ga)N VCSELs. These deviceshave been demonstrated on c-plane GaN or c-plane sapphire and do notexhibit the polarization-locking properties of nonpolar and semipolarVCSELs.

SUMMARY OF THE INVENTION

The present invention comprises a novel device (and process for creatingthis device) comprised of (Al,In,Ga)N VCSELs fabricated on a nonpolar orsemipolar crystal orientation (including, but not limited to, m-plane,a-plane, or 20-21, 20-2-1, 11-22 planes).

For example, the present invention discloses a method of fabricating aIII-Nitride based VCSEL, comprising controlling or defining a cavitylength of the VCSEL by (e.g., selective) etching, e.g., after at leastpartially removing a substrate on which the VCSEL is grown.

In one embodiment, the present invention comprises a novel method forfabricating a GaN VCSEL using photoelectrochemical (PEC) etching toexpose the backside of the device and allow for the deposition of adielectric backside DBR mirror. This is achieved throughbandgap-selective PEC lateral etching of an epitaxially-grownsacrificial layer, which results in the removal of the substrate andleaves a smooth surface for the backside DBR.

Alternatively, PEC etching may be used to etch a deep via through a bulkGaN substrate to expose the backside of the cavity for DBR deposition,or in a bandgap-selective etch mode, to smooth the back facet formedthrough another method, such as manual lapping and polishing or PECundercut substrate removal.

A method of the present invention can also encompass all processingsteps required or that can be used for making an (Al,In,Ga)N VCSEL,including, for example, growth of the epitaxial layer structure,conventional photolithography for device patterning, dry etching fordevice definition and to reveal sacrificial lateral etch layers, metaldeposition, n-type and p-type device contact formation using metaland/or Indium Tin Oxide (ITO) intracavity contact, dielectric depositionand patterning (for device isolation, sidewall protection/passivation,current/light aperture formation), flip chip bonding (such as Au/Aucompression bonding, soldering, etc) and dielectric DBR deposition usingalternating layers of dielectric materials. All processes may be doneusing various methods, including but not limited to, inductively-coupledplasma (ICP) etching, reactive ion etching (RIE), e-beam deposition,sputtering, ion beam deposition (IBD), plasma-enhanced chemical vapordeposition (PECVD), metalorganic chemical vapor deposition (MOCVD), wetetching, and lithography using contact or stepper-based exposure.

The method of the present invention can comprise providing, fabricating,or growing a III-nitride VCSEL structure on a III-nitride substrate andcomprising an etch stop layer below an active region. The VCSELstructure can further comprise the aluminum containing etch stop layerplaced between the active region and the substrate to define the VCSEL'scavity length; a p-type GaN layer, wherein the active region is betweenthe p-type GaN layer and the aluminum containing etch stop layer; anIndium containing sacrificial layer below the active region between thesubstrate and the aluminum containing etch stop layer, and an n-type GaNlayer that is part of the substrate or between the substrate and thealuminum containing etch stop layer.

The method can further comprise etching a mesa through the active regionbut stopping above the etch stop layer, to form a top surface of theepitaxial layers; coating the top surface of the epitaxial layers withdielectric material; etching an aperture in the dielectric material;patterning and depositing a transparent conductive layer on thedielectric material and in the aperture to contact the p-GaN layer inthe aperture; and patterning and depositing metal (e.g., ring metal) onthe transparent conductive layer, wherein the ring metal does not extendinto the aperture.

The method can further comprise fabricating a first cavity mirror forthe VCSEL on a first side of the VCSEL structure (e.g., depositing andpatterning a first dielectric Distributed Bragg Reflector (DBR) on thering metal).

After first cavity mirror fabrication, the method can further compriseattaching the VCSEL structure, at the first cavity mirror, to asubmount. The attaching can comprise depositing pad metal on the firstdielectric DBR, wherein (i) the pad metal makes n-type contact in afield around the first dielectric DBR to protect the first dielectricDBR during a subsequent etch, (ii) the pad metal coats a top of thefirst dielectric DBR for bonding to a submount in the subsequentflip-chip bonding process, and the pad metal is continuous from the topof the first dielectric DBR to the transparent conductive layer toinject current from the submount to the transparent conductive layer.The attaching can further comprise flip-chip bonding the submount to thetop of the first dielectric DBR using the pad metal.

The method can further comprise at least partially removing thesubstrate on a second side of the VCSEL structure opposite the submount,e.g., by laterally photoelectrochemically etching the sacrificial layersto at least partially remove the substrate and leaving the n-type GaNlayer. The method can further comprise patterning and depositing a metaln-contact on the n-type GaN layer after the substrate removal.

The method can further comprise (e.g., selectively) etching down to theetch stop layer to control or define the cavity length of the VCSEL. Thealuminum containing etch stop layer can be positioned to define thecavity length such that the VCSEL has single mode operation or thecavity length is 3 micrometers or less.

After cavity length definition, the method can further comprisefabricating a second cavity mirror for the VCSEL on the second side ofthe VCSEL, wherein the first cavity mirror and the second cavity mirrordefine the VCSEL's laser cavity having the cavity length. The step cancomprise depositing a second dielectric DBR on the aluminum containingstop etch layer and the metal n-type contact, wherein the light from theVCSEL is emitted through the second dielectric DBR.

The present invention also discloses a non-polar or semi-polarIII-nitride VCSEL fabricated on a non-polar or semi-polar (e.g.,III-nitride or GaN) substrate. The semipolar VCSEL can emit blue togreen color light and the nonpolar VCSEL can emit ultraviolet (UV) toblue color light.

The VCSEL can have a cavity length of less than 3 nm.

The VCSEL can emit light with an output power of no less than 19.5microwatts or at least 19.5 microwatts, above threshold. The VCSEL canemit light with a polarization ratio of no less than 0.72 or at least0.72, above threshold. The VCSEL's light emission can have a full widthat half maximum of 0.25 nm or less, or no more than 0.25 nm, abovethreshold.

For example, the present invention has fabricated and demonstratedworking, electrically-injected, single-longitudinal mode (Al,In,Ga)NVCSELs which lase at room temperature, with locked polarization (e.g.,naturally locked along the crystallographic a-direction of the device)and highly directional emission.

The present invention discloses a III-Nitride based (e.g., nonpolar orsemipolar) VCSEL, comprising a cavity length controlled by (e.g.,selective) etching, e.g., during/after at least partially removing asubstrate on which the VCSEL is grown. An Aluminum (Al) containing layerin the VCSEL's epitaxial structure can be used as an etch stop layer forthe etching. An Indium (In) containing layer in the VCSEL's epitaxialstructure can be used as a sacrificial layer for the VCSEL's substrateremoval by etching. The etching can be carried out byphotoelectrochemical etching. The VCSEL can be grown on a nonpolar orsemipolar substrate. A longitudinal mode of the VCSEL can be a singlemode.

The present invention further discloses potential applications.

The polarization-locked (Al,In,Ga)N VCSELs of the present invention aredue to the unique nature of nonpolar and semipolar (Al,In,Ga)N crystalorientations and the process used, which allows for the creation of ahigh-yield of these devices on one wafer. The nonpolar or semipolarVCSEL can be used as a light source, as the pump light source of aphosphor in a display or lighting system, or can be combined with LiquidCrystal On Silicon (LCOS), Liquid Crystal Display (LCD), Liquid CrystalLight Valve (LCLV) or Micro-Electro-Mechanical Systems (MEMS)components, for example.

BRIEF DESCRIPTION OF THE DRAWINGS

Referring now to the drawings in which like reference numbers representcorresponding parts throughout:

FIGS. 1(a)-(n) illustrate a method of fabricating a III-nitride VCSELaccording an embodiment of the present invention, showingcross-sectional schematics of GaN epitaxial films, the active regioncomprising 1 to 15 InGaN quantum wells (2 to 15 nanometers (nm) thick)with quantum barriers 2 to 5 nm thick, a p-A1GaN electron blockinglayer, a sacrificial layer (typically comprising 3×7 nm thick InGaNquantum wells and 5 nm thick GaN quantum barriers), and an n-AlGaNhole-blocking layer (typically 30% Al).

FIG. 2 is a flowchart illustrating a method of fabricating a VCSEL anddefining a cavity/facet, according to one or more embodiments of theinvention.

FIG. 3 is a flowchart illustrating a method of fabricating a VCSEL,according to one or more embodiments of the invention.

FIG. 4(a) illustrates a cross-sectional full device schematic of aworking device, FIG. 4(b) is a Scanning Electron Microscope (SEM) imageof multiple completed devices, and FIG. 4(c) is an optical microscopeimage of device lasing under pulsed operation, according to one or moreembodiments of the present invention.

FIG. 5 is a lasing spectrum, plotting output intensity in arbitraryunits (a.u.) vs. emission wavelength (nm), of a working devicefabricated using the method of FIGS. 1(a)-(n) and having the structureof FIG. 4(a), wherein the device has a 10 micrometer (μm) diameteraperture and the graph is obtained for the device operating at a dutycycle of 0.3% and at a temperature of 20° C.

FIG. 6 is a current vs. light (L-I) curve, plotting light output powerin microwatts (μW) vs. drive current in milliamps (mA), of a workingdevice fabricated using the method of FIGS. 1(a)-(n) and having thestructure of FIG. 4(a), wherein the device has a 10 μm diameteraperture, the graph is obtained for the device driven with 30 ns pulsesat a duty cycle of 0.03% at a temperature of 20° C., and the graph showsa peak output power is 19.5 μW and the threshold current is 70 mA.

FIG. 7(a)-(b) illustrates polarization data, plotting output intensity(a.u.) vs. polarizer angle in degrees °, indicating lasing of a workingdevice fabricated using the method of FIGS. 1(a)-(n), includingpolarization locking along the a-direction of the wurtzite crystalstructure for the m-plane (Al,In,Ga)N VCSEL having the structure of FIG.4(a).

FIG. 8(a) shows an array of polar c-plane (Al,In,Ga)N VCSELs, with thepolarization of any given device being random and wherein, since thepolarization of individual devices is random, a polarization-lockedarray is impossible.

FIG. 8(b) illustrates an array of devices according to the presentinvention, with the polarization of the emitted light locked in the samedirection by the innate structure of nonpolar and semipolar (Al,In,Ga)NVCSELs, according to one or more embodiments of the invention.

FIG. 9 is a flowchart illustrating a method of fabricating an array ofVCSELs, according to one or more embodiments of the invention.

FIG. 10(a)-(c) illustrate a lighting system comprising a nonpolar orsemipolar VCSEL as one or more light sources in the lighting system,according to one or more embodiments of the invention.

FIG. 11(a)-(b) illustrates a display system using one or more nonpolaror semipolar (Al,In,Ga)N VCSELs, according to one or more embodiments ofthe invention.

FIG. 12 illustrates a lighting system using a blue light emitting diode.

FIG. 13 illustrates a lighting system, comprising one or moreIII-nitride nonpolar or semipolar VCSELs emitting violet light thatexcites two or more phosphors with different emission spectra to producewhite light, according to one or more embodiments of the invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following description of the preferred embodiment, reference ismade to the accompanying drawings which form a part hereof, and in whichis shown by way of illustration a specific embodiment in which theinvention may be practiced. It is to be understood that otherembodiments may be utilized and structural changes may be made withoutdeparting from the scope of the present invention.

Technical Description

Vertical Cavity Surface-Emitting Lasers (VCSELs) offer severaladvantages over conventional edge-emitting lasers, including improvedbeam profile, high frequency operation, a small device footprint(allowing densely-packed arrays and the production of more devices perarea of semiconductor wafer), and ease of on-wafer testing. Furthermore,the number of modes available within the gain bandwidth primarilydetermines the number of longitudinal lasing modes in a VCSEL. Forsufficiently short (<3 micrometers) cavity lengths, the mode spacingbecomes large (>10 nanometers (nm)) and the number of modes within thegain bandwidth reduces to one, allowing for devices with truesingle-longitudinal-mode operation. On the other hand, if the cavity istoo long, diffraction and scattering introduce loss to the optical modeand the device efficiency is decreased.

VCSELs fabricated with conventional III-V materials (GaAs, InP)typically have well defined cavity lengths that can be controlled downto very small dimensions via the epitaxial growth of the intra-cavitylayers and the distributed Bragg reflector (DBR) mirrors. This allowsfor well-controlled short cavities and ensures single-longitudinal modeoperation, which is desirable for applications in which wavelengthcontrol and temperature stability are important.

The most challenging aspect of GaN VCSEL fabrication is the formation ofdistributed Bragg reflector (DBR) mirrors. In the (Al,In,Ga)N materialssystem, it is very difficult to achieve high reflectance DBR mirrors dueto challenges associated with epitaxial growth that arise fromlattice-mismatch induced strain. Gallium Nitride or (Al,In,Ga)N VCSELs,with possible applications in high-density optical storage, displays,printing, and biosensing, have previously been fabricated by thinningand polishing a GaN substrate to create the backside DBR mirror, or byepitaxially growing the backside DBR mirror.

Thinning/polishing gives very little cavity length control, which isessential for proper alignment of the laser cavity resonance with thegain spectrum. Furthermore, mechanical instability and damage inflictedduring the thinning process place a lower bound on the cavity thickness.As a result, the longitudinal mode spacing remains small and single-modeoperation is difficult to achieve, restricting these devices tomulti-longitudinal mode operation [1]. Finally, epitaxial growth of DBRmirrors in the (Al,In,Ga)N materials system is extremely challenging.

In addition, due to challenges associated with epitaxial growth, thesedevices typically employ a dielectric bottom DBR, which requires theremoval of the substrate and significantly complicates precise controlof the cavity length, particularly down to small dimensions (<3micrometers). For example, fabrication processes involving lapping andpolishing of the substrate are limited to minimum cavity lengths ofaround 5 micrometers, which renders the VCSEL multi-longitudinal mode,because the mode spacing is relatively narrow (2-6 nm).

Dielectric mirrors are much simpler to produce, so an approach thatallows for precise control of cavity length (such as through epitaxialgrowth instead of mechanical polishing) with the simultaneous use ofdielectric DBR mirrors would be ideal for (Al,In,Ga)N VCSEL fabrication.

Photoelectrochemical (PEC) etching can provide such a method. Byincluding a lower-bandgap sacrificial layer in the epitaxial growth at adefined place underneath the device, the substrate of the device can beremoved to reveal a smooth bottom surface for dielectric DBR mirrordeposition. Combined with a flip-chip bonding process to allow forfurther processing, this process can be used to precisely control cavitythickness by exact placement of the sacrificial layer within theepitaxial structure of the device. As such, dielectric DBR mirrors canbe placed on a cavity with an epitaxially-controlled thickness for alaser operating with a single longitudinal mode. Alternatively, even incases where a lateral PEC etch is not used to remove the substrate, atop-down bandgap-selective PEC stop-etch can still be used for veryprecise cavity length control of VCSELs formed by other methods, such aslaser-liftoff of a substrate or mechanical polishing to thin asubstrate.

The present invention describes a method for producing a III-nitride or(Al,In,Ga)N VCSEL, utilizing the unique abilities of PEC etching toachieve a device with superior performance. The present inventionfurther describes the structure of the resulting device.

FIGS. 1(a)-(n) illustrates an example process flow for using a lateralPEC undercut etch for substrate removal and cavity length definition.

FIG. 1(a) shows epitaxial layers are grown homoepitaxially orheteroepitaxially on a suitable substrate 100, including but not limitedto, bulk GaN (polar, nonpolar, or semipolar on any orientation), SiC, orsapphire. The epitaxial structure would typically include alower-bandgap sacrificial region 102 a comprising an Indium (In)containing layer 102 b (e.g., In_(x)Ga_(1-x)N layer) underneath thedevice at a well-defined location, such that the location of theIn_(x)Ga_(1-x)N layer 102 b would define the length of the verticalcavity to be ideally suited for the desired VCSEL device.

This lower-bandgap material 102 b would typically be In_(x)Ga_(1-x)N ofvariable compositions, such that it could be selectively etched by asuitable light source, such as a filtered broadband source or anarrow-emission light source.

The Indium (In) containing layer should be preferred for thelower-bandgap sacrificial layer 102 b because it is easier to etch outthe sacrificial layer by etching. This sacrificial region 102 a could bea single layer or a set of several layers 102 b, of any thickness. Inaddition, this selective etching is more preferred for a nonpolar orsemipolar VCSEL, because the quantum-confined Stark effect (QCSE) limitsthe thickness of sacrificial layers that can be used with polar/c-planesacrificial layers. In polar/c-plane devices, the built-in electricfield that is perpendicular to the sacrificial layer separates theelectrons and holes to opposite sides of the layer. Since it is holesthat participate in PEC etching, this causes non-uniform etching inpolar/c-plane sacrificial layers, so layer thicknesses must be kept verythin to compensate. Thus, superlattices must be used and the etchingrate may suffer due to the thin sacrificial layers used: lower surfacearea and increased aspect ratio during lateral etching can both limitetching rate. Nonpolar and semipolar planes limit the QCSE in thesacrificial layers (remove it completely in the case of nonpolar), andthereby remove the design restrictions placed on the sacrificial layerby QCSE in the polar/c-plane devices.

FIG. 1(a) also illustrates a specific example of an epitaxial structure,showing sacrificial undercut InGaN layers 102 b (7 nm thick quantumwells having 5 nm thick GaN barriers 102 c, forming a 3 period InGaN/GaNMulti Quantum Well (MQW) absorbing at a peak wavelength of ˜415 nm), andan AlGaN stop-etch layer 104 (a 15 nm thick n-type AlGaN Hole BlockingLayer/Stop-etch layer with 30% Al composition). The epitaxial structureof FIG. 1(a) further illustrates the lower bandgap sacrificial region102 a on an n-type GaN (n-GaN) template 100 or substrate, a 50 nm thickGaN layer 106 between the lower bandgap sacrificial region 102 a and theAlGaN stop-etch layer 104, a 902 nm thick n-GaN layer 108 between theAlGaN layer 104 and the active region 110 a (comprising a 5 periodInGaN/GaN MQW, including 7 nm thick InGaN quantum wells 110 b with 5 nmthick GaN barriers 110 c, emitting at a peak wavelength of 405 nm), a 15nm thick p-type AlGaN electron blocking layer (EBL) 112 with 20% Alcomposition on the active region 110 a, and a 127 nm thick p-type GaN(p-GaN) and/or p⁺⁺ contact layer 114 on the EBL 112.

In other examples, the active region 110 a comprises 1 to 15 InGaNquantum wells 110 b that are 2 to 15 nm thick, having quantum barriers110 c that are 2 to 5 nm thick.

The top of the device would be fabricated according to thespecifications of the device, including making electrical contacts tothe device, etching to define mesas and other features, dielectricdeposition for sidewall passivation or current confinement, depositionof a DBR mirror, and bonding to a suitable submount, for example asilicon wafer. Examples of these fabrication steps are illustrated inFIG. 1(b)-(i).

FIG. 1(b) illustrates a first step, dry etching a mesa 116 through theactive region 110 a but stopping above sacrificial layers 102 b.

FIG. 1(c) illustrates a second step, blanket coating the wafer 118 withdielectric material 120, typically Silicon Nitride (SiN), and etching anaperture 122 in the dielectric material 120 to allow for currentinjection.

FIG. 1(d) illustrates a third step, patterning and depositing atransparent conductive layer or Indium Tin Oxide (ITO) intracavitycontact 124 on the dielectric material 120 and the p-GaN 114 (e.g., byperforming a wet etch, dry etch, or liftoff). The contact 124 mustcontact the p-GaN 114 in the aperture 122, and be continuous outwardsfor receiving p-contact metal 126 deposited on the contact 124 in alater step illustrated in FIG. 1(f).

FIG. 1(e) illustrates a fourth step, dry etching down to revealsidewalls 128 of the sacrificial layer 102 b. Placement of this step inthe process is not critical, and can be anywhere from the 3^(rd) to6^(th) step.

FIG. 1(f) illustrates a fifth step, patterning and depositing metal 126(e.g., ring metal 126) for p-contact to the ITO 124, wherein the ringmetal 126 does not extend into the aperture 122 but extends out formetal contact to metal pad 130 formed in FIG. 1(h).

FIG. 1(g) illustrates a sixth step, depositing and patterning adielectric DBR 132. Typically the DBR comprises Ta₂O₅/SiO₂ alternatinglayers, but the DBR 132 could also be SiO₂/SiN, SiO₂/TiO₂, SiO₂/Nb₂O₅,etc. In one embodiment, the DBR material and structure is such that theDBR 132 has >99% reflectivity at the target emission wavelength for thelaser diode.

FIG. 1(h) illustrates a seventh step, comprising depositing pad metal130. The step includes 3 features: (1) the pad metal 130 must maken-contact in the field 134 around the mesa 136, to protect the mesa 136and/or DBR 132 during the PEC etch to follow, (2) the pad metal 130 mustcoat the top 138 of the DBR 132 for bonding to a submount 142 in aflip-chip bonding process, and (3) the pad metal 130 must be continuousfrom the top 138 of the DBR 132 to the bottom 140 of the DBR 132 toinject current from the submount 142 (deposited in FIG. 1(i)) to the ITOcontact 124.

FIG. 1(i) illustrates flip-chip bonding the submount 142 to the top 138of DBR 132 using the metal 130 on the top 138 of the DBR 132. Thebonding can include a Au/Au compression bond, solder reflow, or manyother bonding types. FIG. 1(j) illustrates the bonded structure formedin FIG. 1(i) flipped upside-down.

FIG. 1(k) illustrates substrate 100 removal through a lateral PEC etchof the sacrificial region 102 a. In this step, the sample/device 144 canbe submerged in any appropriate electrolyte solution (including, but notlimited to, KOH, HCl, HNO₃, etc.), and exposed to light that is abovethe bandgap of the In_(x)Ga_(1-x)N sacrificial layer 102 b, but belowthe bandgap of GaN. The latter condition is a requirement that allowsfor PEC etching of the In_(x)Ga_(1-x)N sacrificial layer 102 b whilepreventing undesirable etching of other surrounding layers, such as theGaN substrate 100. This light could come from any source, includingnarrow-emission sources like lasers or Light Emitting Diodes (LEDs), orfiltered broadband sources like a Xe lamp with a long-pass filter (usingGaN itself as a filter will allow for any composition of In_(x)Ga_(1-x)Nto be etched while not allowing etching of GaN). The sacrificialIn_(x)Ga_(1-x)N layers 102 b will etch laterally, and after some timewill be completely removed (e.g., undercut), freeing the substrate 100from the individual devices 144 that were bonded to a carrier substrate142. The etch process may or may not include an applied bias ortemperature control, which can assist in the etch process.

Here, only photo-enhanced chemical or PEC etching was described.However, all kinds of etching without photo-enhancement or lightirradiation could be applied to remove the sacrificial layer 102 b.

After substrate 100 removal, the devices 144 (mounted on a carrier 142)can be further processed according to the desired device. This wouldtypically include metal contacts to inject current (as shown in FIG.1(l), which illustrates patterning and depositing a metal n-contact146), and the patterning of an additional dielectric DBR mirror 148, asillustrated in FIG. 1(m) and FIG. 1(n).

FIG. 1(m) illustrates a second PEC etch, comprising bandgap a selectivestop-etch down through the n-GaN 106 to the AlGaN Hole Blocking Layer(HBL) 104 for precise cavity length control.

FIG. 1(n) illustrates depositing a light emitting DBR 148, wherein thelight emitting DBR 148 is slightly less reflective than non-emitting DBR132.

Through this process, the cavity length 150 of the device 152 isprecisely controlled by the epitaxial growth of the device through theplacement of the sacrificial In_(x)Ga_(1-x)N layer 102 b, while theexpense and difficulty of fabricating epitaxially-grown DBR mirrors isavoided. Additionally, such precise control of cavity length (as opposedto mechanical polishing, which gives very little control over finalthickness) allows for consistent single longitudinal mode operation ofthe VCSEL with a high device yield, without having to resort to thickcavities that do not allow single longitudinal mode operation.

Facet Formation/Cavity Length Definition

Another application of PEC etching is for cavity length control of(Al,In,Ga)N VCSELs, comprising a top-down stop etch for facet formationand cavity length definition.

A schematic example process flow is shown in FIGS. 1(a)-(n). In thegiven example illustrated in FIGS. 1(a)-(n), both PEC etch methods(substrate removal and facet formation/cavity length definition) aredemonstrated together, but that is not a requirement of the presentinvention. It is merely more convenient to combine the schematics forboth possible embodiments.

The following is an example of how facet formation/cavity lengthdefinition could be applied, as illustrated in FIG. 2 and in furtherreference to FIGS. 1(a)-(n).

Block 200 represents obtaining or growing epitaxial layershomoepitaxially or heteroepitaxially on a suitable substrate (e.g., asillustrated in FIG. 1(a)). Suitable substrates include, but are notlimited to, bulk GaN (polar, nonpolar, or semipolar on any orientation),SiC, or sapphire. The epitaxial structure would typically include ahigher bandgap material, such as Al_(x)Ga_(1-x)N of some appropriatecomposition x (e.g., AlGaN layer 104 in FIG. 1(a)), underneath thedevice at a well-defined location, such that the location of theAl_(x)Ga_(1-x)N would correspond to a length of the vertical cavity andwould be ideally suited for the desired VCSEL device. Thishigher-bandgap layer could be a single layer, or could comprise ofmultiple layers, such as a superlattice.

Block 202 represents the top of the device would be fabricated accordingto the specifications of the device, including making electricalcontacts to the device, etching to define mesas (e.g., FIG. 1(b)) andother features, dielectric deposition for sidewall passivation orcurrent confinement (e.g., FIG. 1(c), deposition of a DBR mirror (e.g.,FIG. 1(g)), and bonding to a suitable submount (e.g., FIG. 1(i), forexample a silicon wafer. Such a process could be the same as seen in theembodiment above, or could be the same as seen in references [1] and[2].

After suitable submounting, as illustrated in Block 204, Block 206represents the substrate is either thinned or removed through any numberof appropriate methods, including laser liftoff of sapphire substrates,mechanical thinning/polishing, etching by wet or dry techniques, laserablation, or even PEC lateral undercut etching, as discussed above(e.g., FIG. 1(k)) . This thinning, etching, or substrate removal shouldhappen below the Al_(x)Ga_(1-x)N region 104, such that theAl_(x)Ga_(1-x)N region remains completely intact. Alternatively, for abulk GaN substrate, bonding and thinning or substrate removal may not berequired, as the following PEC etch step may be done through the entiresubstrate.

Block 208 represents metal contacts are then patterned onto the exposedrear surface of the device.

Block 210 represents etching for facet formation/cavity lengthdefinition, wherein the sample could then be submerged in anyappropriate electrolyte solution (including, but not limited to, KOH,HCl, HNO₃, etc.), and exposed to light that is above the bandgap of GaN,but below the bandgap of the Al_(x)Ga_(1-x)N stop-etch layer. The lattercondition is a requirement that allows for etching of the GaN while notetching the Al_(x)Ga_(1-x)N stop-etch layer. This light could come fromany source, including narrow-emission sources like lasers or LEDs, orfiltered broadband sources like a Xe lamp with a long-pass filter. Theetch process may or may not include an applied bias or temperaturecontrol, which can assist in the etch process.

Block 212 represents the devices (mounted on a carrier) can be furtherprocessed according to the desired device. This would typically includemetal contacts (e.g., 146 in FIG. 1(l)) to inject current (if the metalcontacts formed prior to the PEC etch are not sufficient for deviceoperation), and the patterning of an additional dielectric DBR mirror(e.g., FIG. 1(m) and FIG. 1(n)).

Through this process, a smooth surface is formed, with theAl_(x)Ga_(1-x)N stop-etch region 104 forming the smooth facet of thedevice. As such, the cavity length of the overall device is preciselycontrolled by the placement of the Al_(x)Ga_(1-x)N region 104 duringepitaxial growth of the device.

Through this process, the cavity length of the device is preciselycontrolled by the epitaxial growth of the device through the placementof the Al_(x)Ga_(1-x)N region 104, but the expense and difficulty offabricating epitaxially-grown DBR mirrors is avoided. Additionally, suchprecise control of cavity length (as opposed to mechanical polishing,which gives very little control over final thickness) allows forconsistent single longitudinal mode operation of the VCSEL with a highdevice yield, without having to resort to thick cavities that do notallow single longitudinal mode operation.

FIG. 3 illustrates a method of fabricating a III-Nitride based VCSEL,comprising controlling or defining a cavity length of the VCSEL byetching (e.g., selective etching) e.g., during/after at least partiallyremoving the substrate upon which the VCSEL structure is grown.

Block 300 represents obtaining, providing, fabricating, or growing aIII-nitride VCSEL structure on a III-nitride substrate, the VCSELstructure comprising an etch stop layer below an active region. Thesubstrate can be a nonpolar or semipolar substrate, or the VCSEL can begrown on a nonpolar or semipolar surface of the substrate (e.g.,III-nitride or GaN substrate).

For example, the step can comprise obtaining or growing epitaxial layersepitaxially on a nonpolar or semipolar surface of a III-nitridesubstrate to form a VCSEL structure, the VCSEL structure comprising anactive region; an aluminum containing etch stop layer placed between theactive region and the substrate to define the VCSEL's cavity length; ap-type GaN layer, wherein the active region is between the p-type GaNlayer and the aluminum containing etch stop layer; and an n-type GaNlayer that is part of the substrate or between the substrate and thealuminum containing etch stop layer. The VCSEL structure can compriseone or more sacrificial layers containing indium below the activeregion, between the substrate and the aluminum containing etch stoplayer. The VCSEL structure can be the structure of FIG. 1(a), forexample.

Block 302 represents fabricating the top of the device. The step cancomprise etching a mesa through the active region but stopping above theetch stop layer, to form a top surface of the epitaxial layers; coatingthe top surface of the epitaxial layers with dielectric material;etching an aperture in the dielectric material; patterning anddepositing a transparent conductive layer on the dielectric material andin the aperture to contact the p-GaN layer in the aperture; andpatterning and depositing metal (e.g., ring metal) on the transparentconductive layer, wherein the (e.g., ring) metal does not extend intothe aperture. The steps can be as shown in FIGS. 1(b)-(f), for example.

Block 304 represents fabricating a first cavity mirror for the VCSEL ona first side of the VCSEL structure, e.g., as shown in FIG. 1(g). Thestep can comprise depositing and patterning a first dielectricDistributed Bragg Reflector (DBR) on the ring metal.

Block 306 represents attaching the VCSEL structure, at the first cavitymirror, to a submount. The step can comprise depositing pad metal on thefirst dielectric DBR, wherein: the pad metal makes n-type contact in afield around the first dielectric DBR to protect the first dielectricDBR during a subsequent etch, the pad metal coats a top of the firstdielectric DBR for bonding to a submount in a subsequent flip-chipbonding process, and the pad metal is continuous from the top of thefirst dielectric DBR to the transparent conductive layer to injectcurrent from the submount to the transparent conductive layer. The stepcan further comprise flip-chip bonding the submount to the top of thefirst dielectric DBR using the pad metal. The steps can be as shown inFIGS. 1 (g)-(h).

Block 308 represents optionally at least partially removing thesubstrate, e.g., leaving the n-type GaN layer (e.g., as shown in FIG.1(k)). The substrate can be removed by etching. An Indium (In)containing layer in the VCSEL structure can be used as a sacrificiallayer for the substrate removal by (e.g., selective) etching. Thesubstrate can be removed on a second side of the VCSEL structureopposite the submount. The etching (e.g., selective etching) can becarried out by PEC etching.

Block 310 represents patterning and depositing a metal n-contact on then-type GaN layer (if necessary).

Block 312 represents (e.g., selectively) etching the VCSEL structure tocontrol a cavity length of the VCSEL, e.g., as shown in FIG. 1(m). AnAluminum (Al) containing layer in the VCSEL structure can be used as anetch stop layer for the (e.g., selective) etching to control the cavitylength. The (e.g., selective) etching can be carried out byphotoelectrochemical (PEC) etching. The step can comprise selectivelyetching down to the Aluminum containing etch stop layer, to control ordefine the cavity length of the VCSEL, e.g., such that the VCSEL hassingle mode operation or the cavity length is 3 micrometers or less.

Block 314 represents fabricating a second cavity mirror for the VCSEL ona second side of the VCSEL opposite the first side, wherein the firstcavity mirror and the second cavity mirror define the VCSEL's lasercavity having the cavity length, e.g., as shown in FIG. 1(n). The stepcan comprise depositing a second dielectric DBR on the aluminumcontaining stop etch layer and the metal n-type contact, wherein thelight from the VCSEL is emitted through the second dielectric DBR.

Block 316 represents the end result, a III-Nitride based VCSEL. TheVCSEL can comprise a cavity length controlled and/or defined and/orformed by (e.g., selective) etching (e.g., of epitaxial layers of theVCSEL structure). The etching or selective etching can be during and/orafter partially or totally removing the substrate.

The semipolar VCSEL can have an active region comprising an indiumcomposition/material bandgap that emits from blue to green color. Thenonpolar VCSEL can have an active region comprising an indiumcomposition/material bandgap that emits from Ultraviolet (UV) to bluecolor. The semipolar/nonpolar VCSEL can have an active region comprisingan indium composition/material bandgap that emits radiation/light havinga peak intensity at one or more wavelengths in a range from ultravioletto red. The VCSEL can be grown on a non-polar m-plane substrate andlight emitted by VCSEL can be polarization-locked along an a-directionof the VCSEL. The VCSEL can be grown on a semi-polar substrate, such asa (20-21) or (20-1-1) substrate, and light emitted by VCSEL can bepolarization-locked along an a-direction of the VCSEL.

The VCSEL's light emission can have a full width at half maximum of nomore than 0.25 nm above threshold (see FIG. 5), the VCSEL can emit lightwith an output power of no less than 19.5 microwatts or at least 19.5microwatts, above threshold (e.g., at a drive current of no more than120 milliamps), as shown in FIG. 6, and/or the VCSEL can emit light witha polarization ratio of no less than 0.72 or at least 0.72, abovethreshold (e.g., at a drive current of no more than 120 milliamps), asshown in FIG. 7(a).

Block 318 represents optionally incorporating the VCSEL in anapplication. This VCSEL could be used as a high quality light source(e.g., polarized light source) for a number of applications, includingprojectors, backlighting displays, scientific applications that requirehigh quality coherent light sources, optical data storage (e.g., highdensity optical storage), high-resolution or laser printing, andbiosensing, as described below.

Applications that would benefit from polarization-locked VCSEL arraysinclude those which require polarized light in an intensity greater thanthat which can be produced by a single VCSEL.

The nonpolar or semipolar VCSEL can be used for the application of allkinds of sensors with an advantage of light polarization that is lockedeffectively along a certain direction (e.g., along an a-direction oreffectively perpendicular to a c-direction of the III-nitride device).

Results

Given here are also data showing the successful fabrication of an(Al,In,Ga)N laser diode fabricated using the process flow shown in FIG.1(a)-(n), resulting in the device structure shown in FIG. 4(a).

FIG. 4(a) illustrates an embodiment of a device, comprising a non-polaror semi-polar III-nitride VCSEL 400 fabricated on a non-polar orsemi-polar substrate (e.g. GaN or III-nitride substrate), wherein thesubstrate is at least partially removed. The VCSEL 400 can be asingle-longitudinal-mode III-Nitride based nonpolar or semipolar VCSEL.The VCSEL can have a cavity length L of less than 3 microns.

The epitaxial structure for the device of FIG. 4 was grown on afree-standing m-plane GaN substrate (nominally offcut by 1° in the-c-direction) using atmospheric-pressure metal-organic chemical vapordeposition. The active region 402 comprises 5 In_(0.1)Ga_(0.9)N quantumwells (each 7 nm thick) with GaN barriers (each 5 nm thick) and a 15 nmthick Mg-doped Al_(0.2)Ga_(0.8)N electron blocking layer. A sacrificialInGaN region was embedded in the n-GaN 404 beneath the active region402, consisting of 3 In_(0.1)Ga_(0.9)N quantum wells (each 7 nm thick)separated by GaN barriers (each 5 nm thick). The placement of a 15 nmAl_(0.3)Ga_(0.7)N hole-blocking layer HBL 50 nm above the sacrificialregion serves to define the cavity length (˜7λ, where λ the wavelengthof light emitted by the active region) and to prevent hole transport tothe device sidewalls during the lateral undercut PEC etch [4] asdescribed in FIG. 1(k). A mesa was defined by etching through the activeregion 402 (stopping above the sacrificial region, using the stepillustrated in FIG. 1(b)) and a SiN_(X) dielectric was patterned forprotection of the active region 402 sidewalls during PEC etching and todefine a current aperture, which ranges in diameter from 7 to 10 μm (asillustrated in FIG. 1(c)).

Approximately 50 nm (λ/4-wave) of ITO was deposited and patterned as ap-type ohmic intra-cavity contact and current spreading layer, andcontacting p-GaN 406 in the current aperture, as illustrated in FIG.1(d). A metal ring contact 408 (Cr/Ni/Au) was formed around the currentaperture (see FIG. 1(f)) before deposition of a λ/8-wave Ta₂O₅interlayer to align the high-absorption ITO with a node of the opticalstanding wave and a 13-period SiO₂/Ta₂O₅ DBR) 410 (see FIG. 1(g)). Asecond mesa etch was performed to expose the sidewalls of thesacrificial undercut layer (as shown in FIG. 1(e)) and metal 412 (Ti/Au)was patterned to form a bonding pad and to electrically connect themetal ring contact 408 to the submount 414, as shown in FIG. 1(h). Thesample was then bonded to a metal-coated sapphire submount 414 (see FIG.1(i)) and the sacrificial InGaN layer was laterally etched bybandgap-selective PEC etching (as shown in FIG. 1(k)), using KOH and a405 nm laser light source, until the substrate was removed. Ohmic ringn-contacts 416 (Ti/Au) were formed on the bonded mesas in alignment withthe current apertures, as shown in FIG. 1(l) and a secondbandgap-selective PEC etch was performed, with the Al_(0.3)Ga_(0.7)N HBLacting as a highly-selective stop-etch layer, as shown in FIG. 1(m).Finally, a 10-period SiO₂/Ta₂O₂ DBR 418 was deposited, as shown in FIG.1(n).

The end result is the VCSEL 400 comprising submount 414, Ti/Au metal412, DBR 410, Cr/Ni/Au metal 408, ITO, SiN_(x), p-GaN 406, active region402, n-GaN 404, AlGaN HBL, Ti/Au metal 416, and DBR 418.

FIG. 4(b) shows a scanning electron microscope (SEM) image of threecompleted devices. FIG. 4(c) shows the near-field pattern of a10-μm-diamater device operating above threshold.

FIG. 5 is the lasing spectrum of the device lasing at a wavelength of˜412 nm with a very narrow full-width half-max (FWHM). The lasingspectrum is obtained for the device operated above threshold at 100 mAwith a duty cycle of 0.3% and at a temperature of 20° C. The lasingspectrum shows a full width at half maximum of ˜0.25 nm, an emissionwavelength of ˜412 nm, and that the device operates with a singlelongitudinal mode. Based on the device design, the total cavity length(including the effective penetration depth into the mirrors) is 1.47 μm.For this cavity length, the longitudinal mode spacing is approximately15 nm and only one mode should exist within the gain bandwidth.

Thus, the present invention further discloses single-longitudinal-mode(Al,In,Ga)N VCSELs e.g., that utilize band-gap selectivephotoelectrochemical (PEC) etching of an epitaxially-grown sacrificiallayer to achieve precise control of the cavity length down to smalldimensions and guarantee single-longitudinal-mode operation.

FIG. 6 is a current vs. light (L-I) curve for the device showing a sharpturn-on threshold that is characteristic of a laser diode. FIG. 6illustrates the VCSEL can emit light with an output power of no lessthan 19.5 microwatts μW or at least 19.5 microwatts, above threshold(e.g., at a drive current of no more than 120 milliamps).

FIG. 7 (a) and (b) demonstrate the polarization of light emitted by thedevices: below threshold, the degree of polarization is low. Abovethreshold, once lasing begins, the laser is highly-polarized alsoindicating lasing. Because this is a nonpolar (Al,In,Ga)N devicefabricated on the m-plane of the wurtzite crystal structure, the lightpolarizes in such a way that it is polarization-locked on the [1-210]a-direction of the wurtzite crystal structure for this III-nitride VCSELstructure. For both FIGS. 7(a) and 7(b), the polarizer angle was 0° whenoriented along the [1-210] a-direction of the device. Thus, FIG.7(a)-(b) illustrate the light emitted from the VCSEL is polarizationlocked (having its light polarization locked to a certain direction)effectively along the a-direction or perpendicular to the c-direction.

The polarization ratio is given by (L_(max)−L_(min))/(L_(max)+L_(min)),where L_(max) and L_(min) are the maximum and minimum relative lightintensities, respectively. At currents of 60, 80, 100, and 120 mA, thepolarization ratio is approximately 0.14, 0.15, 0.62, and 0.72,respectively. Well above the threshold current, the polarization ratioincreases by approximately 5×.

FIG. 7(a) illustrates the VCSEL can emit light with a polarization ratioof no less than 0.72 or at least 0.72, above threshold (e.g., at a drivecurrent of no more than 120 milliamps).

Multiple devices have been confirmed to show the samepolarization-locking effect along the preferred crystal axis of thedevice. The non-polar and semi-polar (Al,In,Ga)N VCSELs afford highlydirectional and polarization locked operation of single devices and/orarrays of devices.

Arrays of VCSELs

FIG. 8(a) illustrates polar c-plane VCSELs, and FIG. 8(b) illustratesnonpolar or semipolar VCSELs of the present invention, wherein in FIGS.8(a) and 8(b) the circles represent individual VCSELs and the arrowsindicate the direction of polarization of the electric field of theindividual VCSELs.

FIGS. 8(a) and 8(b) illustrate the differences between polar c-planeVCSELs, and the nonpolar or semipolar VCSELs of the present invention.

The VCSELs of FIG. 8(a) exhibit random polarization. Conventional VCSELscan exhibit random polarization of the lasing mode due to theircircularly symmetric cavities and isotropic gain properties. As aresult, polarization control is difficult to achieve. Because nopolarization-locked VCSELs have been demonstrated to-date, it has beenimpossible to achieve a polarization-locked VCSEL array, as all devicesin the array would be polarized randomly with respect to one-another, asillustrated in FIG. 8(a).

The present invention solves these problems. Specifically, nonpolar andsemipolar (Al,In,Ga)N materials allow for the fabrication of VCSELs withwell controlled polarization. Due to the anisotropic gaincharacteristics of nonpolar and semipolar materials, the polarization ofthe lasing mode will lock along the direction of the highest gain. Thisdirection will be well defined and the same for devices on a givenplane. As a result, it is possible to fabricate single devices, orarrays of devices that all have the same direction of polarization (asillustrated in FIG. 8(b)). FIG. 8(b) illustrates a device comprising anonpolar or semipolar VCSEL array with each VCSEL having its lightpolarization locked along a specific direction, e.g., effectively alonga-direction or effectively perpendicular to c-direction.Polarization-locked arrays of VCSELs could provide high optical powerwith a well-defined polarization. This is particularly important forapplications requiring stable polarization, such as liquid crystal onsilicon (LCOS) displays, liquid crystal displays (LCDs), Liquid CrystalLight Valve (LCLV) displays, Micro-Electro-Mechanical Systems (MEMS)displays, data storage, printing, and biosensing.

Nonpolar or semipolar (Al,In,Ga)N VCSELs could be fabricated through anynumber of methods, but would be polarization-locked as an innateproperty of the devices.

FIG. 9 illustrates a method of fabricating an array of nonpolar orsemipolar VCSELs.

Block 900 represents the step of fabricating a nonpolar or semipolarVCSEL structure on a wafer, e.g., according to the method of FIGS.1(a)-(n).

Block 902 represents dividing the VCSEL structure fabricated in Block900 to fabricate a plurality of VCSELs, e.g., by dicing or etching toseparate the VCSEL devices. Devices could be left on-wafer and dicedinto array of any arbitrary desired size, or could be singulated andthen placed into an apparatus or application individually, with thelight being combined externally.

Block 904 represents the end result, a novel device comprising an arrayof nonpolar or semipolar (Al,In,Ga)N VCSELs, or (Al,In,Ga)N VCSELsfabricated on a nonpolar or semipolar crystal orientation (including,but not limited to, m-plane, a-plane, 20-21, 20-2-1, 11-22), asillustrated in FIG. 8(b), with each VCSEL having its light polarizationlocked to a certain direction, e.g., all the VCSELs polarization-lockedaccording to the crystal structure of the underlying substrate materialor substrate upon which the VCSEL was grown. For example, for an arrayof nonpolar m-plane (Al,In,Ga)N VCSELs, the polarization is locked intothe a-direction of the wurtzite crystal structure, perpendicular to thec-direction, and normal to the m-direction which is the direction of thepropagation of the laser light. The nonpolar or semipolar VCSEL arraycan be used for all kinds of lighting applications with or without otherlighting sources.

This polarization-locked array is due to the unique nature of non-polarand semi-polar (Al,In,Ga)N VCSELs and the process used which allows forthe creation of a high-yield of these devices on one wafer.

Nonpolar or Semipolar VCSEL Lighting System

The nonpolar or semipolar III-nitride VCSEL of the present inventioncould be used as a high quality light source for a number of lightingapplications, including directional lighting, light-bulbs, directionalillumination, projectors, and displays.

FIG. 10(a) illustrates a lighting system comprising a nonpolar orsemipolar (e.g., III-nitride) laser or VCSEL as one of the light sources1000 emitting light 1002. The light source 1000 can comprise a singleVCSEL or a plurality of VCSELs (e.g., an array of nonpolar and/orsemipolar VCSELs). The VCSELs or lasers can emit violet light, forexample. A highly directional and polarized emission from the nonpolarand semipolar VCSEL can be used in the lighting systems.

FIG. 10(b) illustrates a lighting system in which the nonpolar orsemipolar VCSEL is coupled into a light guiding material 1004. Thenonpolar or semipolar VCSEL can be coupled into a fiber optic, such thatlight 1002 emitted by the VCSEL is coupled into the fiber optic 1004.

FIG. 10(c) illustrates a lighting system in which a nonpolar orsemipolar VCSEL is pumping a down-converting media 1006, medium, ormaterial with light 1002 emitted from the VCSEL. The down-convertingmaterial 1006 can be composed of a phosphor, organic dye, organic LED,polymer, single crystal, garnet compound, semiconductor, or quantum dot,for example. The nonpolar or semipolar VCSEL can be used to pump aremotely placed down-conversion media, medium, or material 1006, or thenonpolar or semipolar VCSEL can be used to pump a down-conversion media1006 in contact with the device, VCSEL, or lighting apparatus. Thenonpolar or semipolar VCSEL emission can be collimated or focused ontothe down-conversion media 1006. The nonpolar or semipolar VCSEL emissioncan be partially or fully down-converted.

VCSEL Based Display System

FIG. 11(a) illustrates a device comprising a display system 1100 using,or in combination with, one or more nonpolar or semipolar VCSELs as oneof the light sources 1000. The display system 1100 can use an array ofthe nonpolar or semipolar VCSELs as the light source 1000. The displaysystem 1100 comprises the VCSEL coupled to a display 1102, wherein thelight 1104 emitted from the VCSEL is coupled into the display 1102 toprovide lighting or back lighting for the display 1102. The VCSELs cancomprise (Al,In,Ga)N VCSELs fabricated on a non-polar or semi-polarcrystal orientation (including, but not limited to, m-plane, a-plane,(20-21), (20-2-1), (11-22)).

As discussed above, non-polar and semi-polar (Al,In,Ga)N VCSELs affordpolarization locked operation of single devices and/or arrays ofdevices. The one or more nonpolar or semipolar VCSELs in the displaysystem can have their light polarization locked to a certain direction,e.g., the VCSELs can be all polarization-locked according to the crystalstructure of the underlying substrate material, the nonpolar orsemipolar VCSEL can have its light polarization locked effectively alongan a-direction, or effectively perpendicular to a c-direction. Forexample, m-plane non-polar and tilted m-plane semipolar planes (such as(20-21) and (20-2-1)) will polarize preferentially along thecrystallographic a-direction (perpendicular to the c-direction). Thispolarization allows for the use of non-polar and semi-polar (Al,In,Ga)NVCSELs in applications requiring polarized light, including display,lighting, projectors, and projection systems/technologies such as LCOS,LCD, LCLV and MEMS display systems. Thus, the display 1102 or displaysystem 1100 can comprise a liquid crystal on silicon (LCOS), liquidcrystal display (LCD), Liquid Crystal Light Valve (LCLV), orMicro-Electro-Mechanical Systems (MEMS) display system.

The polarized emission from nonpolar and semipolar lasers of the presentinvention can be of particular use in display systems, since polarizedemission will result in higher efficiency of light transmission throughthe display system and therefore higher system efficiency.

The nonpolar or semipolar VCSELs in the display can optically pumpdown-converting material, as described in the section entitled “Nonpolaror Semipolar VCSEL Lighting System”. For example, the nonpolar orsemipolar VCSEL light source can be in combination with a phosphor andpump the phosphor. Thus, the nonpolar or semipolar VCSEL can be used asthe pump light source of a phosphor in the display 1102 or lightingsystem.

FIG. 11(b) illustrates the nonpolar or semipolar VCSEL light source 1000in the display system 1100 in combination with an LED light source. Forexample, the VCSEL can be in combination with at least a red LEDemitting red light 1106 and at least one phosphor 1108, wherein theVCSEL is a blue laser, emitting blue light 1110, and the VCSEL pumps thephosphor 1108 such that the phosphor 1108 emits green light 1112 inresponse to the blue light 1110, and the display 1102 receives red 1106,blue 1110, and green light 1112.

The nonpolar or semipolar VCSEL light source 1000 can be a red, green,or blue light source. When the VCSEL is a red, green, or blue lightsource, the phosphor can emit yellow or green light.

White Light Source

FIG. 12 illustrates a conventional solid-state lighting system using aIII-nitride LED 1200 that emits blue light 1202 to excite a phosphor1204, typically Ce-doped YAG, that emits yellow light 1206 [5]. Some ofthe blue light 1202 from the LED 1200 is transmitted through thephosphor 1204 and is combined with the yellow light 1206 from thephosphor 1204 to create a dichromatic white light source. However, thisconfiguration for a solid-state lighting system typically has a lowColor Rendering Index (CRI) and a high correlated color Temperature(CCT), and produces white light with a spectrum that differsconsiderably from the spectrum of natural sunlight [6].

As an alternative to the dichromatic white light source discussed above,a violet III-nitride LED can be used to excite two or more phosphorswith different emission spectra to create a high-quality white lightsource with a high CRI and low CCT [5]. In such a lighting system, thelight emitted from the violet III-nitride LED may or may not be combinedwith the light emitted from the phosphors to create a high-quality whitelight source. However, the light emitted by an LED is spatially andtemporally incoherent, meaning that some fraction of the light emittedby the LED is always going to be lost due to absorption at the backsideof the LED, absorption at metal contacts at the top side of the LED, orpotentially misdirected emission from the sidewalls of the LED.

Thus, there is a need in the art for improved white light-emittingdevices for use in solid-state lighting systems. The present inventionsatisfies this need.

This invention uses a violet III-nitride nonpolar or semipolar VCSEL toexcite two or more phosphors with different emission spectra to createan energy efficient solid-state lighting system that produceshigh-quality white light. A VCSEL is a type of semiconductor laser wherethe laser beam emission is perpendicular to the surface of the wafer,much like an LED. The advantage of using a VCSEL instead of an LED isthat the light emitted by a VCSEL is spatially and temporally coherent,so both the directionality and efficiency of the light extraction can beprecisely controlled through the design of the optical cavity.

Although the spatial and temporal coherence of light emission from aVCSEL can be useful for controlling light extraction, highly coherentlight emission can also be harmful to human vision. Thus, for someapplications, the highly coherent emission from a VCSEL may precludereplacing the blue LED 1200 in FIG. 12 with a blue VCSEL emitting bluelight, so that the blue light 1202 emitted from the blue III-nitrideVCSEL combined with yellow light 1206 emitted from a phosphor 1204creates a dichromatic white light source (in other words, for someapplications, a blue III-nitride VCSEL may not be used as a lightemitter in the solid-state lighting system configuration shown in FIG.12). To be safe for human vision, and in some applications, the coherentlight emitted by a III-nitride VCSEL would need to be completelyabsorbed by the phosphor materials.

Therefore, to make a safe, high-quality white light source thatincorporates a III-nitride VCSEL, the present invention discloses aIII-nitride VCSEL emitting violet light exciting two or more phosphorswith different emission spectra for a high CRI and low CCT. The violetlight can be completely absorbed by the phosphor materials.

This type of configuration for a solid-state lighting system isillustrated by the schematic in FIG. 13, which illustrates a lightingsystem, comprising: one or more III-nitride nonpolar or semipolar VCSELs1300 emitting violet light 1302 (e.g., with an emission wavelengthbetween about 380 nm and 430 nm) that excites two or more phosphors 1304with different emission spectra to produce white light, e.g., with a CRIgreater than 90 or about 90 and/or a CCT less than 3000K or about 3000K. The violet light emitted by the III-nitride nonpolar or semipolarVCSELs can be substantially completely absorbed by the phosphors. Thephosphors can emit red 1306, green 1308, and blue 1310 light whenexcited by the violet light 1302, wherein the combination of red 1306,green 1308, and blue 1310 light appears as the white light. Althoughthree phosphors 1304 emitting red 1306, green 1308, and blue 1310 lightare shown in the schematic for the purpose of illustration, any numberof two or more phosphors could be used to create an energy efficienthigh-quality white light source. The III-nitride nonpolar or semipolarlasers in the white light source can be arranged in an array.

Similar advantages in terms of directionality and efficiency for lightextraction could also be obtained with an edge-emitting laser (EEL),since the light emitted by an EEL is also spatially and temporallycoherent. An EEL is a type of semiconductor laser where the laser beamemission is parallel to the surface of the wafer and the mirrors of thelaser that define the optical cavity are formed by cleaving the waferalong crystallographic planes that are perpendicular to the surface ofthe wafer. Although both types of lasers emit spatially and temporallycoherent light, VCSELs have a number of advantages related tomanufacturing compared to EELs. EELs cannot be tested until the very endof the device fabrication when the wafer is cleaved to form the opticalcavity. If the EEL does not function properly due to poor materialquality or a processing problem, the entire fabrication time and all ofthe processing materials will have been wasted. In contrast, VCSELs canbe tested at several stages throughout the fabrication to check formaterial quality and processing issues. In addition, since the lightemission from VCSELs is perpendicular to the surface of the wafer, tensof thousands of devices can be formed on a single wafer and largenumbers of devices can even be connected in parallel to form ultrahighpower density arrays [7]. These sorts of arrays could be used in asolid-state lighting system to form ultrahigh power density light whitelight emitters.

Possible Modifications

As discussed above, VCSEL devices can also be fabricated on semi-polarsubstrate orientations such as, but not limited to, 20-21 orientations.

VCSEL device performance can be further improved, including improvedthreshold current density, improved power output, improved device yield.The VCSELs can operate at a wide range of wavelengths (such as blue andgreen).

Advantages and Improvements

The present invention has fabricated and demonstrated working,electrically-injected (Al,In,Ga)N VCSELs which lase at room temperature.

The present invention's method allows for the fabrication of (Al,In,Ga)NVCSELs that provide better yield and performance ratios vs. cost thanVCSELs fabricated using other methods.

The present invention's structure/method can demonstrate/fabricate(Al,In,Ga)N VCSELs with improved or enhanced device performance overVCSELs (including other (Al,In,Ga)N VCSELs) fabricated using othermethods or over polar/c-plane oriented VCSELs. For example, the presentinvention can be used to fabricate single-longitudinal-mode (Al,In,Ga)NVCSELs, which are difficult to realize with other fabrication techniqueswhich have only achieved multi-longitudinal mode operation [1]. Thepresent method allows for extremely precise control of cavity length (aprerequisite for a high yield of single-mode VCSELs), as the cavitylength is entirely controlled by epitaxial growth, and it allows forthis precise control while still allowing for the use of cheaper/easierdielectric DBR mirrors (as opposed to epitaxially-grown DBRs, which aresignificantly more difficult to produce). Thus, the present invention'smethod provides very precise cavity control in the production of a(Al,In,Ga)N in a way that is much easier than any other method that canprovide a similar level of cavity length control.

Non-polar and semi-polar III-nitride or (Al,In,Ga)N VCSELs have inherentadvantages for many applications. Due to the anisotropic gain in thequantum wells, such devices display a well-defined and consistentpolarization, allowing for polarization locked operation of singledevices and/or arrays of devices. For example, m-plane non-polar andtilted (e.g., slightly-tilted) m-plane semipolar planes (such as (20-21)and (20-2-1)) will polarize preferentially along the crystallographica-direction (perpendicular to the c-direction).

As a result, nonpolar and semipolar (Al,In,Ga)N VCSELs demonstrateinherent advantages and improved device performance over c-plane andpolar-oriented (Al,In,Ga)N VCSELs, particularly in applicationsrequiring polarized light, such as LCD and LCOS displays, as nonpolarand semipolar devices are polarization-locked according to the crystalorientation/structure of the semiconductor wafer/device and polarc-plane oriented devices are randomly polarized. Improved gain onnonpolar and semipolar orientations (e.g., higher gain thanpolar/c-plane orientations for (Al,In,Ga)N devices) can also lead toenhanced/better device performance in other metrics and/or in allapplications (not just those requiring polarized light), such as opticaldata storage and high-resolution printing. The enhanced opticalcharacteristics of non-polar and semi-polar (Al,In,Ga)N VCSELs couldalso be used in specialty applications such as biosensing.

For applications requiring high-quality polarized light in powers higherthan what is available for a single VCSEL, polarization-locked VCSELarrays could be an attractive option, due to the high quality of thepolarization present and the higher powers available from arrays ofarbitrary size. Specifically, because of the nature of the VCSELpolarization, whereby the light output from the VCSEL is polarizedaccording to the crystal structure of the devices, all devices willpolarize identically. This is in contrast to polar/c-plane oriented(Al,In,Ga)N VCSELs, which polarize randomly. This identical polarizationamong all devices allows device arrays of arbitrary size to beconstructed where all devices are identically polarizing, greatlyexpanding the number of applications for which these devices can beused. Because polar/c-plane oriented devices polarize randomly,applications which require polarized light are limited to single devicesor arrays, which then use a polarizing filter to polarize the outputlight, thereby limiting the power and/or efficiency available from suchlight sources. However, because of the polarization-locked nature ofnon-polar/semi-polar (Al,In,Ga)N device arrays, many devices can bearrayed to yield additional optical power for applications requiring ahigh intensity of highly-polarized light.

These advantages will also result in lighting systems with higher systemefficiencies.

Nomenclature

The terms (Al,In,Ga)N or “Group-III nitride” or “III-nitride” or“nitride” as used herein refer to any composition or material related to(Al, In, Ga)N semiconductors having the formula Al_(x)In_(y)Ga_(z)Nwhere 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1. These terms as used herein areintended to be broadly construed to include respective nitrides of thesingle species, Al, In, and Ga, as well as binary, ternary andquaternary compositions of such Group III metal species. Accordingly,these terms include, but are not limited to, the compounds of AlN, GaN,InN, AlGaN, AlInN, InGaN, and AlGaInN. When two or more of the (Al, In,Ga)N component species are present, all possible compositions, includingstoichiometric proportions as well as off-stoichiometric proportions(with respect to the relative mole fractions present of each of the (Al,In, Ga)N component species that are present in the composition), can beemployed within the broad scope of this invention. Further, compositionsand materials within the scope of the invention may further includequantities of dopants and/or other impurity materials and/or otherinclusional materials.

Similarly, Group III-nitride or III-nitride can also refer to(Al,In,Ga,B)N semiconductors having the formula Al_(x)In_(y)Ga_(z)B_(w)Nwhere B is Boron and 0≦x≦1, 0≦y≦1,0≦z≦1,0≦w≦1 and w+x+y+z=1.

This invention also covers the selection of particular crystalorientations, directions, terminations and polarities of Group-IIInitrides. When identifying crystal orientations, directions,terminations and polarities using Miller indices, the use of braces, {}, denotes a set of symmetry-equivalent planes, which are represented bythe use of parentheses, ( ). The use of brackets, [ ], denotes adirection, while the use of brackets, < >, denotes a set ofsymmetry-equivalent directions.

Many Group-III nitride devices are grown along a polar orientation,namely a c-plane {0001} of the crystal, although this results in anundesirable quantum-confined Stark effect (QCSE), due to the existenceof strong piezoelectric and spontaneous polarizations. One approach todecreasing polarization effects in Group-III nitride devices is to growthe devices along nonpolar or semipolar orientations of the crystal.

The term “nonpolar” includes the {11-20} planes, known collectively asa-planes, and the {10-10} planes, known collectively as m-planes. Suchplanes contain equal numbers of Group-III and Nitrogen atoms per planeand are charge-neutral. Subsequent nonpolar layers are equivalent to oneanother, so the bulk crystal will not be polarized along the growthdirection.

The term “semipolar” can be used to refer to any plane that cannot beclassified as c-plane, a-plane, or m-plane. In crystallographic terms, asemipolar plane would be any plane that has at least two nonzero h, i,or k Miller indices and a nonzero 1 Miller index. Subsequent semipolarlayers are equivalent to one another, so the crystal will have reducedpolarization along the growth direction.

REFERENCES

The following references are incorporated by reference herein.

[1] K. Omae, et al., “Improvement in Lasing Charateristics of GaN-basedVertical-Cavity Surface-Emitting Lasers Using a GaN Substrate”, Appl.Phys. Express 2 052101 (2009).

[2] O. Imafuji, et al., “Continuous Wave Operation of GaN VerticalCavity Surface Emitting Lasers at Room Temperature”, J. Quant. Elec. 481107 (2012).

[3] T- C Lu, et al., “CW lasing of current injection blue GaN-basedvertical-cavity surface emitting laser”, Appl. Phys. Lett 92, 141102(2008).

[4] A. C. Tamboli, M. C. Schmidt, A. Hirai, S. P. DenBaars, and E. L.Hu, “Photoelectrochemical Undercut Etching of m-Plane GaN for MicrodiskApplications,” Journal of The Electrochemical Society, vol. 156, no. 10,p. H767, 2009.

[5] M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L.Zhou, G. Harbers, and M. G. Craford, J. Disp. Technol. 3, 160 (2007).

[6] E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge UniversityPress, Cambridge, 2006).

[7] J. F. Seurin, C. L. Ghosh, V. Khalfin, A. Miglo, X. Guoyang, J.Wynn, P. Pradhan, and L. Arthur D'Asaro, Proc. SPIE 6908, 690808 (2008).

[8] Casey Holder et. al., Demonstration of Nonpolar GaN-BasedVertical-Cavity Surface-Emitting Lasers, Appl. Phys. Express 5 (2012)092104.

CONCLUSION

This concludes the description of the preferred embodiment of thepresent invention. The foregoing description of one or more embodimentsof the invention has been presented for the purposes of illustration anddescription. It is not intended to be exhaustive or to limit theinvention to the precise form disclosed. Many modifications andvariations are possible in light of the above teaching. It is intendedthat the scope of the invention be limited not by this detaileddescription, but rather by the claims appended hereto.

What is claimed is:
 1. A device, comprising: a non-polar or semi-polarIII-nitride Vertical Cavity Surface Emitting Laser (VCSEL) fabricated ona non-polar or semi-polar substrate.
 2. The device of claim 1, whereinlight emitted from the VCSEL is polarization locked.
 3. The device ofclaim 1, wherein the VCSEL is grown on a non-polar or semi-polar GaNsubstrate.
 4. The device of claim 1, wherein the VCSEL is grown on anon-polar or semi-polar III-nitride substrate.
 5. The device of claim 1,wherein the VCSEL is grown on a non-polar m-plane GaN or III-nitridesubstrate and light emitted by VCSEL is polarization-locked along ana-direction of the VCSEL.
 6. The device of claim 1, wherein the VCSEL isgrown on a semi-polar GaN or III-nitride substrate and light emitted byVCSEL is polarization-locked along an a-direction of the VCSEL.
 7. Thedevice of claims 1, wherein the non-polar VCSEL emits Ultraviolet (UV)light.
 8. The device of claims 1, wherein the non-polar VCSEL emits bluelight.
 9. The device of claim 1, wherein the semi-polar VCSEL emitsgreen light.
 10. The device of claim 1, wherein the semi-polar VCSELemits blue light.
 11. The device of claim 1, wherein the VCSEL has acavity length of less than 3 microns.
 12. The device of claim 1, whereinthe VCSEL comprises a cavity formed by etching of epitaxial layersduring or after the substrate's partial or total removal.
 13. The deviceof claim 1, wherein the VCSEL comprises a cavity length such that theVCSEL has single longitudinal mode operation.
 14. The device of claim 1,wherein the VCSEL emits light with an output power of no less than 19.5microwatts, above threshold.
 15. The device of claim 1, wherein theVCSEL emits light with a polarization ratio of no less than 0.72, abovethreshold.
 16. The device of claim 1, wherein the VCSEL's light emissionhas a full width at half maximum of 0.25 nm or less, above threshold.17. A method of fabricating a device, comprising: fabricating anon-polar or semi-polar III-nitride Vertical Cavity Surface EmittingLaser (VCSEL) on a non-polar or semi-polar substrate.
 18. The method ofclaim 17, wherein the substrate is a non-polar or semi-polar III-nitridesubstrate and the VCSEL has a cavity length of less than 3 microns. 19.The method of claim 17, wherein the substrate is a non-polar orsemi-polar GaN substrate and the VCSEL comprises a cavity length suchthat the VCSEL has single longitudinal mode operation.
 20. The method ofclaim 17, wherein the fabricating comprises forming a cavity by etchingof epitaxial layers during or after the substrate's partial or totalremoval.